US 7,312,162 B2 · Low temperature plasma deposition process for carbon layer deposition

Abstract

A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.

Claims19

Dependent claims

A method of depositing a carbon layer on a workpiece, comprising:

placing the workpiece in a reactor chamber;
introducing a carbon-containing process gas into the chamber;
generating a reentrant toroidal RF plasma current in a reentrant path that indludes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of said reentrant path;
coupling RF plasma bias power or bias voltage to the workpiece;
and
enhancing optical absorption of the deposited carbon layer by heating the carbon layer following completion of its deposition.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

11/131,941Filed 17 May 2005

Published

US 2006/0264060 A123 Nov 2006

Granted

25 Dec 2007

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

C23C 16/52
Characterised by the method of coating: controlling or regulating the coating process
C23C 16/26
Characterised by the deposition of inorganic material, other than metallic material: deposition of carbon only
C23C 16/505
Using electric discharges: using radio frequency discharges
H10P 34/42
With high-energy radiation: with electromagnetic radiation, e.g. laser annealing

Low temperature plasma deposition process for carbon layer deposition

Life of this patent

Low temperature plasma deposition process for carbon layer deposition

Life of this patent

Abstract

Claims19