Semiconductor device manufacturing method and semiconductor device manufacturing system

A semiconductor device manufacturing system, comprising:

• a first processing apparatus;
• a second processing apparatus;
• a third processing apparatus;
• a fourth processing apparatus;
• and
• a control device configured to control the first processing apparatus, the second processing apparatus, the third processing apparatus, and the fourth processing apparatus,
• wherein the control device performs:
• a) preparing, in a chamber of the first processing apparatus, a substrate having a pattern including a plurality of metal-containing layers formed on an underlayer and a dielectric layer formed on each of the metal-containing layers;
• b) modifying sidewalls of the metal-containing layers by supplying a modifying gas into the chamber;
• c) generating plasma from a first processing gas including a carbon-containing gas in the chamber, and forming a graphene film on the sidewalls of the metal-containing layers by using the generated plasma;
• d) embedding, by using the second processing apparatus, a thermally decomposable organic film in a groove formed by adjacent metal-containing layers;
• e) forming, by using the third processing apparatus, a sealing film on the organic film embedded in the groove;
• and
• f) forming, by using the fourth processing apparatus, an air gap between the groove and the sealing film, by heating the substrate to thermally decompose the organic film and detaching the organic film via the sealing film.