Method for depositing an amorphous carbon layer

A method of forming a device, comprising:

• forming one or more amorphous carbon layers on a substrate by providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas, maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr and heating the gas mixture to thermally decompose the one or more hydrocarbon compounds in the gas mixture to form the one or more amorphous carbon layers on the substrate;
• defining a pattern in at least one region of the one or more amorphous carbon layers;
• and
• transferring the pattern defined in the at least one region of the one or more amorphous carbon layers into the substrate using the one or more amorphous carbon layers as a mask.

A method of forming a device, comprising:

• forming one or more amorphous carbon layers on a substrate by providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas, maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr and heating the gas mixture to thermally decompose the one or more hydrocarbon compounds in the gas mixture to form the one or more amorphous carbon layers on the substrate;
• forming an intermediate layer on the one or more amorphous carbon layers, wherein the intermediate layer is an oxide;
• forming a first layer of energy sensitive resist material on the intermediate layer;
• introducing an image of a pattern into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation;
• developing the image of the pattern introduced into the layer of energy sensitive resist material;
• transferring the pattern to the intermediate layer using the layer of energy sensitive resist material as a mask;
• transferring the pattern through the one or more amorphous carbon layers using the intermediate layer as a mask;
• and
• transferring the pattern defined in the at least one region of the one or more amorphous carbon layers into the substrate using the one or more amorphous carbon layers as a mask.

A method of fabricating a damascene structure, comprising:

• forming a dielectric layer on a substrate, wherein the dielectric layer has a dielectric constant less than about 4.5;
• forming an amorphous carbon layer on the dielectric layer by positioning the substrate in a deposition chamber, wherein the substrate has a dielectric layer thereon, maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr, providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas, and heating the gas mixture to thermally decompose the one or more hydrocarbon compounds in the gas mixture to form the amorphous carbon layer on the dielectric layer;
• patterning the amorphous carbon layer to define contacts/vias therethrough;
• transferring the pattern formed in the amorphous carbon layer through the dielectric layer to form contacts/vias therein;
• removing the amorphous carbon layer from the patterned dielectric layer;
• and
• filling the contacts/vias formed in the dielectric layer with a conductive material.

A method of forming an amorphous carbon layer on a substrate comprising:

• positioning a substrate in a deposition chamber;
• providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas;
• maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr;
• and
• generating a plasma of the gas mixture to decompose the one or more hydrocarbon compounds in the gas mixture to form an amorphous carbon layer on the substrate.

A method of fabricating a damascene structure, comprising:

• forming a dielectric layer on a substrate;
• forming an amorphous carbon layer on the dielectric layer by positioning the substrate in a deposition chamber, wherein the substrate has a dielectric layer thereon, providing a gas mixture to the deposition chamber, wherein the gas mixture comprises one or more hydrocarbon compounds and an inert gas, maintaining the deposition chamber at a pressure between about 1 Torr to about 20 Torr, and generating a plasma of the gas mixture to decompose the one or more hydrocarbon compounds in the gas mixture to form an amorphous carbon layer on the substrate;
• patterning the amorphous carbon layer to define contacts/vias therethrough;
• transferring the pattern formed in the amorphous carbon layer through the dielectric layer to form contacts/vias therein;
• removing the amorphous carbon layer from the patterned dielectric layer;
• and
• filling the contacts/vias formed in the dielectric layer with a conductive material.