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US 12,757,738 B2Granted
Semiconductor structure, semiconductor device with air spacers, and method for fabricating the same
AssigneeNanya Technology Corporation
InventorFeng-Wen Hsu
Life of this patent
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Abstract
A semiconductor device is provided, which includes a substrate, a first dielectric layer, a conductive layer, and an insulating capping layer. The first dielectric layer is disposed on the substrate. The conductive layer is disposed on the first dielectric layer. The conductive layer includes a plurality of conductive wires. The insulating capping layer is disposed on the conductive layer, and configured to enclose a plurality of first gaps between the conductive wires to form a plurality of air spacers.
Claims12
A semiconductor device, comprising:
- a substrate;
- a first dielectric layer, disposed on the substrate;
- a conductive layer, disposed on and in contact with a top surface of the first dielectric layer, wherein the conductive layer comprises a first conductive wire and a second conductive wire spaced apart from the first conductive wire, wherein the first conductive wire and the second conductive wire are disposed on the top surface of the first dielectric layer;
- an insulating capping layer, disposed on the conductive layer, and configured to enclose a plurality of first gaps between the conductive wires to form a plurality of air spacers;
- a gate structure, disposed on a top surface of the substrate;
- a first conductive element having a top surface in contact with the first conductive wire;
- and
- a second conductive element having a top surface in contact with the second conductive wire.
5 more elements
Dependencies are inferred from the claim text.