H10P 14/6903
Containing silicon
Official title: {containing silicon}
H10P14/6903 (Containing silicon) appears on 1,343 US grants and 1,554 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,343
- Published applications
- 1,554
- Assignees
- 312
- Inventors
- 2,649
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 4 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 0 | 0 |
| 1996 | 4 | 0 |
| 1997 | 0 | 0 |
| 1998 | 6 | 0 |
| 1999 | 2 | 0 |
| 2000 | 7 | 0 |
| 2001 | 18 | 5 |
| 2002 | 24 | 28 |
| 2003 | 27 | 38 |
| 2004 | 37 | 51 |
| 2005 | 26 | 53 |
| 2006 | 51 | 66 |
| 2007 | 28 | 46 |
| 2008 | 29 | 37 |
| 2009 | 28 | 40 |
| 2010 | 36 | 32 |
| 2011 | 36 | 36 |
| 2012 | 22 | 30 |
| 2013 | 33 | 51 |
| 2014 | 43 | 50 |
| 2015 | 47 | 97 |
| 2016 | 100 | 93 |
| 2017 | 98 | 96 |
| 2018 | 91 | 100 |
| 2019 | 83 | 80 |
| 2020 | 79 | 111 |
| 2021 | 77 | 79 |
| 2022 | 74 | 83 |
| 2023 | 52 | 81 |
| 2024 | 53 | 72 |
| 2025 | 70 | 65 |
| 2026 | 38 | 34 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Organic vapor jet printing system22 Sep 2026US 12,745,554 B2Universal Display Corporation
- Ion implantation for increased adhesion with resist material22 Sep 2026US 12,745,578 B2APPLIED Materials.Inc.
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium15 Sep 2026US 12,740,351 B2Kokusai Electric Corporation
- Substrate processing method and substrate processing apparatus25 Aug 2026US 12,721,079 B2Tokyo Electron Limited
- Semiconductor cleaning using plasma-free precursors25 Aug 2026US 12,721,080 B2APPLIED Materials.Inc.
- Semiconductor device and method of manufacture8 Oct 2026US 2026/0314011 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-function etching sacrificial layers to protect three-dimensional dummy fins in semiconductor devices8 Oct 2026US 2026/0314347 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure8 Oct 2026US 2026/0314475 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and Method for Deep Trench Capacitor with Reduced Deformation1 Oct 2026US 2026/0304797 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming gate-all-around (gaa) devices1 Oct 2026US 2026/0304842 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Method of forming conformal film having si-N bonds on high-aspect ratio pattern597US 8,394,466 B2ASM Japan K .K. · 2013
- Method for forming silazane-based dielectric film592US 7,651,959 B2ASM Japan K .K. · 2010
- Method of tailoring conformality of Si-containing film591US 8,669,185 B2ASM Japan K .K. · 2014
- Methods for forming a dielectric layer within trenches576US 7,803,722 B2APPLIED Materials.Inc. · 2010