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US 7,803,722 B2Granted
Methods for forming a dielectric layer within trenches
AssigneeApplied Materials, Inc.
InventorJingmei Liang
Life of this patent
Estimating the term…
Abstract
A method for forming a semiconductor structure includes reacting a silicon precursor and an atomic oxygen or nitrogen precursor at a processing temperature of about 150° C. or less to form a silicon oxide or silicon-nitrogen containing layer over a substrate. The silicon oxide or silicon-nitrogen containing layer is ultra-violet (UV) cured within an oxygen-containing environment.
Claims11
A method for forming a semiconductor structure, comprising:
- reacting a silicon precursor and an atomic oxygen precursor at a processing temperature of about 150° C. or less to form a silicon oxide layer over a substrate;
- and
- UV-O3 curing the silicon oxide layer within an ozone containing environment.
Dependencies are inferred from the claim text.