Substrate processing method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorKouzou Tachibana
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Abstract
A substrate processing method of cleaning a substrate having a patterned Si film while removing an oxide on the Si film includes removing the oxide by supplying a cleaning liquid containing hydrofluoric acid and water to the substrate while rotating the substrate; and mixing an organic solvent, which has miscibility with the water and has a lower surface tension than the water, into the cleaning liquid. The mixing of the organic solvent is performed during the removing of the oxide and after a predetermined time has elapsed from a start of the removing of the oxide.
Claims12
A substrate processing method of cleaning a substrate having a patterned Si film while removing an oxide on the Si film, the substrate processing method comprising:
- removing the oxide by supplying a cleaning liquid containing hydrofluoric acid and water to the substrate while rotating the substrate;
- and
- mixing an organic solvent, which has miscibility with the water and has a lower surface tension than the water, into the cleaning liquid,
- wherein the mixing of the organic solvent is performed during the removing of the oxide and after a predetermined time has elapsed from a start of the removing of the oxide.
Dependencies are inferred from the claim text.