Method for forming silazane-based dielectric film
AssigneeASM Japan K.K.
InventorsAtsuki Fukazawa, Jeongseok Ha, Nobuo Matsuki
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Abstract
A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a silazane-based film essentially constituted by Si, N, H, and optionally C on the substrate by plasma reaction at −50° C. to 50° C., wherein the film is free of exposure of a solvent constituted essentially by C, H, and optionally O; and heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si—O bonds in the film.
Claims25
A method of forming a dielectric film, comprising:
- introducing a source gas comprising Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed;
- depositing a silazane-based film comprising Si, N, H, and optionally C on the substrate in a liquid or flowable state by plasma reaction at −50° C. to 50° C., wherein the film is free of exposure of a solvent comprising C, H, and optionally O;
- heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si—O bonds in the film;
- and
- high heat-treating the film at a temperature of 700° C.-1,000° C. in an inert gas environment upon the heat treatment step.
A method of forming a dielectric film, comprising:
- introducing a source gas comprising Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed;
- and
- depositing a silazane-based film comprising Si, N, H, and optionally C on the substrate in a liquid or flowable state by plasma reaction at −50° C. to 50° C., wherein the film is free of exposure of a solvent comprising C, H, and optionally O,
- wherein the substrate is placed between capacitively-coupled electrodes, between which a plasma is generated in the deposition step,
- the source gas comprises Si, H, N, and C, and a gap between the electrodes is set at 16 mm or more in the deposition step, and
- no hydrocarbon gas is introduced into the reaction chamber.
A method of forming a dielectric film, comprising:
- introducing a source gas comprising Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed;
- and
- depositing a silazane-based film comprising Si, N, H, and optionally C on the substrate in a liquid or flowable state by plasma reaction at −50° C. to 50° C., wherein the film is free of exposure of a solvent comprising C, H, and optionally O,
- wherein the substrate is placed between capacitively-coupled electrodes, between which a plasma is generated in the deposition step,
- the source gas comprises Si, H, N, and C, and a gap between the electrodes is set at 16 mm or more in the deposition step, and
- the source gas is comprised of a gas constituted by Si, N, H, and C, and a gas constituted by N and optionally H.
Dependencies are inferred from the claim text.