Structure and Method for Deep Trench Capacitor with Reduced Deformation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFu-Chiang KUO, Hsin-Liang CHEN, Hsin-Li CHENG, Ting-Chen HSU
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Abstract
The present disclosure provides an embodiment of a method. The method includes patterning a substrate to form trenches; etching the substrate, thereby modifying the trenches with round tips; forming a stack including conductive layers and dielectric layers in the trenches, wherein the conductive layers and the dielectric layers alternate with one another within the stack; forming an insulating compressive film in the trenches, thereby sealing voids in the trenches; and forming conductive plugs connected to the conductive layers, respectively.
Claims20
A semiconductor structure, comprising:
- a plurality of deep trenches formed on a substrate;
- a stack of conductive layers and dielectric layers alternatively disposed in the plurality of deep trenches;
- an insulating film of a compressive stress in the deep trenches, thereby sealing voids in the deep trenches, wherein the deep trenches are configured into a plurality of deep trench unit cells, wherein the deep trenches in each of the deep trench unit cells are oriented in a same direction, wherein the deep trenches in adjacent deep trench unit cells are oriented in different directions, and wherein the voids are entirely enclosed within the insulating film and are spaced from the conductive layers by the insulating film;
- and
- conductive plugs landing on the conductive layers, respectively.
A semiconductor structure, comprising:
- a plurality of deep trenches formed on a substrate;
- a stack of conductive layers and dielectric layers alternatively disposed in the plurality of deep trenches;
- and
- an insulating film of a compressive stress in the deep trenches, thereby sealing voids in the deep trenches, wherein the deep trenches are configured into a plurality of deep trench unit cells, wherein the deep trenches in each of the deep trench unit cells are oriented in a same direction, and wherein the voids are entirely enclosed within the insulating film and are spaced from the conductive layers by the insulating film.
A semiconductor structure, comprising:
- a plurality of deep trenches formed on a substrate;
- a stack of conductive layers and dielectric layers alternatively disposed in the plurality of deep trenches;
- and
- an insulating film of a compressive stress in the deep trenches, thereby sealing voids in the deep trenches, wherein the voids are entirely enclosed within the insulating film and are spaced from the conductive layers by the insulating film.
Dependencies are inferred from the claim text.