H10P 14/6905
Being a silicon carbide or silicon carbonitride and not containing oxygen
Official title: {being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H}
H10P14/6905 (Being a silicon carbide or silicon carbonitride and not containing oxygen) appears on 1,028 US grants and 1,210 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,028
- Published applications
- 1,210
- Assignees
- 237
- Inventors
- 1,956
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 3 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 3 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 4 | 0 |
| 1999 | 2 | 0 |
| 2000 | 6 | 0 |
| 2001 | 16 | 5 |
| 2002 | 20 | 23 |
| 2003 | 25 | 38 |
| 2004 | 36 | 45 |
| 2005 | 26 | 45 |
| 2006 | 46 | 46 |
| 2007 | 23 | 39 |
| 2008 | 21 | 32 |
| 2009 | 24 | 35 |
| 2010 | 31 | 21 |
| 2011 | 29 | 27 |
| 2012 | 19 | 26 |
| 2013 | 24 | 37 |
| 2014 | 30 | 38 |
| 2015 | 29 | 69 |
| 2016 | 75 | 76 |
| 2017 | 66 | 61 |
| 2018 | 67 | 80 |
| 2019 | 61 | 57 |
| 2020 | 58 | 80 |
| 2021 | 56 | 64 |
| 2022 | 53 | 62 |
| 2023 | 41 | 64 |
| 2024 | 38 | 60 |
| 2025 | 53 | 57 |
| 2026 | 29 | 23 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Ion implantation for increased adhesion with resist material22 Sep 2026US 12,745,578 B2APPLIED Materials.Inc.
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium15 Sep 2026US 12,740,351 B2Kokusai Electric Corporation
- Semiconductor device and method of manufacture18 Aug 2026US 12,713,677 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and method for deep trench capacitor with reduced deformation11 Aug 2026US 12,707,655 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for forming the same28 Jul 2026US 12,696,792 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacture8 Oct 2026US 2026/0314011 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-function etching sacrificial layers to protect three-dimensional dummy fins in semiconductor devices8 Oct 2026US 2026/0314347 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure8 Oct 2026US 2026/0314475 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and Method for Deep Trench Capacitor with Reduced Deformation1 Oct 2026US 2026/0304797 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming gate-all-around (gaa) devices1 Oct 2026US 2026/0304842 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Method of forming conformal film having si-N bonds on high-aspect ratio pattern597US 8,394,466 B2ASM Japan K .K. · 2013
- Method for forming silazane-based dielectric film592US 7,651,959 B2ASM Japan K .K. · 2010
- Method of tailoring conformality of Si-containing film591US 8,669,185 B2ASM Japan K .K. · 2014
- Methods for forming a dielectric layer within trenches576US 7,803,722 B2APPLIED Materials.Inc. · 2010