Structure and method for deep trench capacitor with reduced deformation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFu-Chiang Kuo, Hsin-Liang Chen, Hsin-Li Cheng, Ting-Chen Hsu
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Abstract
The present disclosure provides an embodiment of a method. The method includes patterning a substrate to form trenches; etching the substrate, thereby modifying the trenches with round tips; forming a stack including conductive layers and dielectric layers in the trenches, wherein the conductive layers and the dielectric layers alternate with one another within the stack; forming an insulating compressive film in the trenches, thereby sealing voids in the trenches; and forming conductive plugs connected to the conductive layers, respectively.
Claims20
A method, comprising:
- patterning a substrate to form trenches;
- etching the substrate, thereby modifying the trenches with round tips;
- forming a stack including conductive layers and dielectric layers in the trenches, wherein the conductive layers and the dielectric layers alternate with one another within the stack;
- forming an insulating compressive film of a compressive stress in the trenches, thereby sealing voids in the trenches, wherein the voids are entirely enclosed within the insulating compressive film and are spaced from the conductive layers by the insulating compressive film;
- and
- forming conductive plugs connected to the conductive layers, respectively.
A method, comprising:
- patterning a substrate to form deep trenches;
- etching the substrate, thereby modifying the deep trenches;
- forming a stack including conductive layers and dielectric layers alternatively stacked and folded in the deep trenches;
- and
- forming an insulating film of a compressive stress in the deep trenches, thereby sealing voids in the deep trenches, wherein the deep trenches are configured into a plurality of deep trench unit cells, wherein the deep trenches in each of the deep trench unit cells are oriented in a same direction, wherein the deep trenches in adjacent deep trench unit cells are oriented in different directions, and wherein the voids are entirely enclosed within the insulating film and are spaced from the conductive layers by the insulating film.
A method, comprising:
- forming a first hard mask having first openings on a substrate;
- applying a first etching process to the substrate through the first openings of the first hard mask;
- forming a second hard mask having second openings on the substrate;
- applying a second etching process to the substrate through the second openings of the second hard mask, thereby forming deep trenches, wherein the second openings of the second hard mask are different from the first openings of the first hard mask;
- forming a stack including conductive layers and dielectric layers alternatively stacked and folded in the deep trenches;
- and
- forming an insulating film in the deep trenches, thereby sealing voids in the deep trenches, wherein the deep trenches are configured into a plurality of deep trench unit cells, wherein the deep trenches in each of the deep trench unit cells are oriented in a same direction, and wherein the deep trenches in adjacent deep trench unit cells are oriented in different directions, wherein the voids are entirely enclosed within the insulating film and are spaced from the conductive layers by the insulating film.
Dependencies are inferred from the claim text.