Remote plasma deposition with electrostatic clamping

A remote plasma apparatus, comprising:

• a reaction chamber comprising a processing space in which a semiconductor substrate is processed, wherein the reaction chamber is not configured to generate or sustain a direct plasma in the reaction chamber;
• a remote plasma source fluidly coupled to and upstream of the reaction chamber;
• an RF power supply configured to power plasma in the remote plasma source;
• a showerhead fluidly coupled to the reaction chamber for delivery of plasma-activated species from the remote plasma source to the reaction chamber;
• and
• a substrate pedestal in the reaction chamber, wherein the substrate pedestal comprises an electrostatic chuck comprising a platen made of ceramic material and having an upper surface configured to support the semiconductor substrate, wherein the electrostatic chuck further comprises one or more electrostatic clamping electrodes, wherein the substrate pedestal comprises one or more heating elements configured to heat the semiconductor substrate to a temperature greater than about 450° C.