Method of forming a silicon comprising layer

Method of forming a silicon-comprising layer on a substrate, the method comprising:

• providing the substrate to a process chamber, the process chamber being comprised in a low pressure chemical vapor deposition (LPCVD) furnace, and
• performing, repetitively, a deposition cycle, thereby forming on the substrate the silicon-comprising layer, wherein the deposition cycle comprises:
• a first deposition pulse comprising a provision of a first precursor, comprising a silicon-containing compound, into the process chamber,
• a first purge pulse for removing a portion of the first precursor from the process chamber,
• a second deposition pulse comprising a provision of a second precursor, comprising a nitrogen-containing compound, into the process chamber, and
• a second purge pulse for removing a portion of the second precursor from the process chamber,
• wherein the process chamber is maintained at a process temperature in a range from about 400° C. to about 650° C. during the deposition cycle, and
• wherein the process chamber is maintained at a first pressure during the first deposition pulse and at a second pressure during the second deposition pulse, the first pressure being different from the second pressure to at least reduce hydrogen content.