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US 12,660,523 B2Granted
Method for manufacturing semiconductor device
AssigneeKioxia Corporation
InventorsYuta Saito, Shinji Mori, Hiroyuki Yamashita
Life of this patent
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Abstract
A method for manufacturing a semiconductor device of an embodiment includes: forming a first film on a semiconductor layer containing silicon (Si), the first film containing a metal element and oxygen (O) and having a first thickness; and forming a second film between the semiconductor layer and the first film using radical oxidation, the second film containing silicon (Si) and oxygen (O) and having a second thickness larger than the first thickness.
Claims12
A method for manufacturing a semiconductor device, the method comprising:
- forming a third film containing silicon (Si), oxygen (O), and nitrogen (N) directly on a semiconductor layer containing silicon (Si);
- forming a first film on the third film, the first film containing a metal element and oxygen (O) and having a first thickness;
- and
- forming a second film between the semiconductor layer and the third film using radical oxidation, the second film containing silicon (Si) and oxygen (O), the second film having a second thickness larger than the first thickness, and the second film being in direct contact with the semiconductor layer and the third film,
- wherein the second thickness is 10 times or more the first thickness.
2 more elements
A method for manufacturing a semiconductor device, the method comprising:
- forming an aluminum oxide film on a semiconductor layer containing silicon (Si), the aluminum oxide film having a first thickness;
- and
- forming a silicon oxide film between the semiconductor layer and the aluminum oxide film using radical oxidation, the silicon oxide film having a second thickness larger than the first thickness,
- wherein the first thickness is equal to or more than 1 nm and equal to or less than 5 nm and the second thickness is equal to or more than 10 nm and equal to or less than 300 nm.
1 more element
Dependencies are inferred from the claim text.