Epitaxial gallium nitride alloy ferroelectronics
AssigneeThe Regents of the University of Michigan
InventorsZetian Mi, Ping Wang, Ding Wang
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Abstract
A method of fabricating a heterostructure includes providing a substrate, and implementing a non-sputtered, epitaxial growth procedure at a growth temperature to form a wurtzite structure supported by the substrate. The wurtzite structure includes an alloy of gallium nitride. The non-sputtered, epitaxial growth procedure is configured to incorporate a group IIIB element into the alloy. The wurtzite structure exhibits a breakdown field strength greater than a ferroelectric coercive field strength of the wurtzite structure.
Claims20
A method of fabricating a heterostructure, the method comprising:
- providing a substrate;
- and
- implementing a non-sputtered, epitaxial growth procedure at a growth temperature to form a wurtzite structure supported by the substrate, the wurtzite structure comprising an alloy of gallium nitride, the non-sputtered, epitaxial growth procedure being configured to incorporate a group IIIB element into the alloy;
- wherein the growth temperature is set at a level such that the wurtzite structure is monocrystalline to an extent that the wurtzite structure exhibits a breakdown field strength greater than a ferroelectric coercive field strength of the wurtzite structure.
A method of fabricating a heterostructure, the method comprising:
- providing a substrate;
- and
- implementing a non-sputtered, epitaxial growth procedure to form a wurtzite structure supported by the substrate, the wurtzite structure comprising an alloy of gallium nitride, the non-sputtered, epitaxial growth procedure being configured to incorporate a group IIIB element into the alloy;
- wherein a growth temperature of the non-sputtered, epitaxial growth procedure is set to a level such that leakage paths in the wurtzite structure are reduced to an extent that the wurtzite structure exhibits a breakdown field strength greater than a ferroelectric coercive field strength of the wurtzite structure.
A method of fabricating a heterostructure, the method comprising:
- providing a substrate;
- and
- implementing a non-sputtered, epitaxial growth procedure to form a wurtzite structure supported by the substrate, the wurtzite structure comprising an alloy of gallium nitride, the non-sputtered, epitaxial growth procedure being configured to incorporate a group IIIB element into the alloy;
- wherein a growth temperature and a III/V ratio of the non-sputtered, epitaxial growth procedure are set such that the wurtzite structure exhibits a breakdown field strength greater than a ferroelectric coercive field strength of the wurtzite structure.
Dependencies are inferred from the claim text.