Aluminum Nitride Bonding
AssigneeApplied Materials, Inc.
InventorsMatthew O'LEARY, Kun LI, Keith Kwong Hon WONG
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Abstract
Methods of preparing aluminum nitride for bonding without high temperature annealing leverage an inversion domain boundary (IDB) to form a bonding surface composed of aluminum-polar aluminum nitride. In some embodiments, the method may comprise depositing an aluminum nitride layer where at least a portion of a thickness of the aluminum nitride layer is deposited with an oxygen content of approximately three percent by mass and planarizing the aluminum nitride layer with a chemical mechanical planarization (CMP) process immediately after depositing the aluminum nitride layer and prior to a bonding process to form a bonding surface.
Claims20
A method of bonding aluminum nitride, comprising:
- depositing an aluminum nitride layer, wherein at least a portion of a thickness of the aluminum nitride layer is deposited with an oxygen content of approximately three percent by mass;
- and
- planarizing the aluminum nitride layer with a chemical mechanical planarization (CMP) process immediately after depositing the aluminum nitride layer and prior to a bonding process to form a bonding surface.
A method of bonding aluminum nitride, comprising:
- depositing a first aluminum nitride layer with an oxygen content of approximately three percent by mass on a silicon material with a crystal structure orientation on a deposition surface of (100), wherein the first aluminum nitride layer has a first thickness of approximately 5 nm to approximately 50 nm;
- depositing a second aluminum nitride layer without oxygen on the first aluminum nitride layer, wherein the second aluminum nitride layer has a second thickness of approximately 100 nm to approximately 1000 nm;
- and
- planarizing the second aluminum nitride layer with a chemical mechanical planarization (CMP) process to form a bonding surface immediately after depositing the second aluminum nitride layer and prior to a bonding process.
A non-transitory, computer readable medium having instructions stored thereon that, when executed, cause a method of bonding aluminum nitride to be performed, the method comprising:
- depositing an aluminum nitride layer, wherein at least a portion of a thickness of the aluminum nitride layer is deposited with an oxygen content of approximately three percent by mass;
- and
- planarizing the aluminum nitride layer with a chemical mechanical planarization (CMP) process immediately after depositing the aluminum nitride layer and prior to a bonding process to form a bonding surface.
Dependencies are inferred from the claim text.