H10P 14/69391
The material containing aluminium
Official title: {the material containing aluminium, e.g. Al2O3}
H10P14/69391 (The material containing aluminium) appears on 1,921 US grants and 2,200 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,921
- Published applications
- 2,200
- Assignees
- 500
- Inventors
- 3,809
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 8 | 0 |
| 1977 | 10 | 0 |
| 1978 | 8 | 0 |
| 1979 | 8 | 0 |
| 1980 | 1 | 0 |
| 1981 | 4 | 0 |
| 1982 | 1 | 0 |
| 1983 | 3 | 0 |
| 1984 | 4 | 0 |
| 1985 | 7 | 0 |
| 1986 | 6 | 0 |
| 1987 | 6 | 0 |
| 1988 | 3 | 0 |
| 1989 | 4 | 0 |
| 1990 | 2 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 7 | 0 |
| 1994 | 11 | 0 |
| 1995 | 3 | 0 |
| 1996 | 7 | 0 |
| 1997 | 7 | 0 |
| 1998 | 7 | 0 |
| 1999 | 9 | 0 |
| 2000 | 11 | 0 |
| 2001 | 24 | 15 |
| 2002 | 40 | 56 |
| 2003 | 58 | 89 |
| 2004 | 56 | 105 |
| 2005 | 54 | 98 |
| 2006 | 68 | 111 |
| 2007 | 59 | 80 |
| 2008 | 60 | 79 |
| 2009 | 52 | 58 |
| 2010 | 60 | 46 |
| 2011 | 52 | 45 |
| 2012 | 47 | 43 |
| 2013 | 43 | 55 |
| 2014 | 45 | 57 |
| 2015 | 72 | 121 |
| 2016 | 99 | 115 |
| 2017 | 108 | 112 |
| 2018 | 97 | 127 |
| 2019 | 115 | 119 |
| 2020 | 127 | 150 |
| 2021 | 99 | 104 |
| 2022 | 84 | 91 |
| 2023 | 66 | 101 |
| 2024 | 69 | 96 |
| 2025 | 71 | 78 |
| 2026 | 55 | 49 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Bottom thick oxidation growth in high aspect ratio features15 Sep 2026US 12,740,355 B2APPLIED Materials.Inc.
- Method for forming region-selective thin film using selectivating agent8 Sep 2026US 12,729,427 B2EGTM Co., Ltd.
- Aluminum nitride dipole dopant film for tuning multi-VT devices25 Aug 2026US 12,721,066 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of selective deposition and chemical delivery systems18 Aug 2026US 12,709,797 B2Lam Research Corporation
- Thin film transistor and method of manufactruting thin film transistor18 Aug 2026US 12,713,660 B2Toppan Inc.
- Methods of patterning substrates8 Oct 2026US 2026/0307168 A1University of Rochester
- Aluminum Nitride Bonding1 Oct 2026US 2026/0305273 A1APPLIED Materials.Inc.
- Method for manufacturing semiconductor device24 Sep 2026US 2026/0293543 A1Kioxia Corporation
- Selective deposition of metal oxides using silanes as an inhibitor24 Sep 2026US 2026/0293544 A1Lam Research Corporation
- Inserting inhibition layer for inducing antiferroelectricity to ferroelectric structure17 Sep 2026US 2026/0282503 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003