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US 12,721,066 B2Granted
Aluminum nitride dipole dopant film for tuning multi-VT devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi On Chui, Cheng-Hao Hou, Da-Yuan Lee, Pei Ying Lai, Yi Hsuan Chen, Jia-Yun Xu
Life of this patent
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Abstract
A method includes forming a gate dielectric on a semiconductor region, depositing an aluminum nitride layer on the gate dielectric, depositing an aluminum oxide layer on the aluminum nitride layer, performing an annealing process to drive aluminum in the aluminum nitride layer into the gate dielectric, removing the aluminum oxide layer and the aluminum nitride layer, and forming a gate electrode on the gate dielectric.
Claims20
A method comprising:
- forming a first gate dielectric on a first semiconductor region;
- depositing a first aluminum nitride layer on the first gate dielectric;
- after the first aluminum nitride layer is deposited, depositing an aluminum oxide layer on the first aluminum nitride layer;
- performing a first annealing process to drive aluminum in the first aluminum nitride layer into the first gate dielectric;
- removing the aluminum oxide layer and the first aluminum nitride layer;
- after the aluminum oxide layer and the first aluminum nitride layer are removed, depositing a second aluminum nitride layer over the first gate dielectric;
- removing the second aluminum nitride layer;
- and
- forming a gate electrode on the first gate dielectric.
6 more elements
A method comprising:
- forming a first gate dielectric on a first semiconductor region and a second gate dielectric on a second semiconductor region;
- depositing a first aluminum nitride layer on the first gate dielectric;
- depositing a first aluminum oxide layer over the first aluminum nitride layer;
- performing a first drive-in process to drive aluminum in the first aluminum nitride layer into the first gate dielectric;
- removing the first aluminum oxide layer and the first aluminum nitride layer;
- after the first aluminum nitride layer is removed, depositing a second aluminum nitride layer on the first gate dielectric;
- performing a second drive-in process to drive aluminum in the second aluminum nitride layer into the first gate dielectric;
- and
- forming a first gate electrode on the first gate dielectric and a second gate electrode on the second gate dielectric.
6 more elements
A method comprising:
- forming a first nanostructure and a second nanostructure overlapping the first nanostructure, wherein the first nanostructure is spaced apart from the second nanostructure by a space;
- forming a first gate dielectric and a second gate dielectric on the first nanostructure and the second nanostructure, respectively;
- depositing a first aluminum nitride layer comprising a first portion on the first gate dielectric and a second portion on the second gate dielectric;
- after the first aluminum nitride layer is deposited, depositing a first aluminum oxide layer on the first aluminum nitride layer;
- driving aluminum in the first aluminum nitride layer into the first gate dielectric and the second gate dielectric, wherein during the driving, the first aluminum oxide layer is over the first aluminum nitride layer;
- removing the first aluminum oxide layer and the first aluminum nitride layer;
- after the first aluminum oxide layer and the first aluminum nitride layer are removed, depositing a second aluminum nitride layer over the first gate dielectric;
- and
- depositing a second aluminum oxide layer over the second aluminum nitride layer.
6 more elements
Dependencies are inferred from the claim text.