Selective deposition of metal oxides using silanes as an inhibitor

A method for selective deposition comprising:

• providing a surface of a semiconductor substrate including a first region and a second region, wherein the first region comprises a metal or a semiconductor and the second region comprises a different material than the first region;
• introducing a silicon-containing inhibitor to the surface at a first temperature to provide an inhibitor layer on the first region via a vapor-based deposition process or a plasma-based deposition process, wherein the silicon-containing inhibitor comprises a head group comprising at least one Si—H group and a tail group comprising an organic moiety;
• and
• depositing a first layer on at least a portion of a non-inhibited surface comprising the second region at a second temperature, wherein the first temperature is lower than the second temperature.