Methods of selective deposition and chemical delivery systems
AssigneeLam Research Corporation
InventorsKashish Sharma, Nupur Bihari, Benjamin Edwards, Arpan Pravin Mahorowala, Avinash Gouda Doddamani, Ashwin Kumar, Avinash Jaiswal
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Abstract
Systems and methods of selectively depositing metal oxide on an exposed metal surface relative to a dielectric material on a substrate by pre-treatment with a hydroxy species-generating plasma prior to inhibition of the metal surface with an inhibitor, and subsequent metal oxide deposition on the dielectric material are disclosed. Exemplary inhibitors include low vapor pressure inhibitors. Exemplary systems include heated ampoules and gas lines for delivering inhibitors or other processing chemicals.
Claims8
A method for selective metal oxide deposition on a dielectric material relative to an exposed metal surface on a substrate, the method comprising the steps of:
- (a) providing the substrate comprising the dielectric material and the exposed metal surface;
- (b) contacting the substrate with a plasma generated from a hydrogen-containing source and an oxygen-containing source to generate hydroxy species, wherein the hydroxy species react with the dielectric material to form a hydroxy-terminated dielectric material and react with the exposed metal surface to form an oxidized metal surface;
- (c) exposing the oxidized metal surface and the hydroxy-terminated dielectric material to a deposition inhibitor that selectively modifies the oxidized metal surface, forming an inhibited metal surface;
- and then
- (d) selectively depositing metal oxide on the hydroxy-terminated dielectric material relative to the inhibited metal surface on the substrate.
Dependencies are inferred from the claim text.