Metal oxide thin film precursor, method of fabricating metal oxide thin film using the same, and semiconductor device including the metal oxide thin film

A sample of a metal oxide thin film precursor represented by Chemical Formula 1:

• wherein, in Chemical Formula 1,
• M is zirconium (Zr) or hafnium (Hf),
• R1 to R6 are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C2 to C6 alkenyl group, or a substituted or unsubstituted silyl group,
• R7 to R11 are each independently hydrogen, deuterium, a halogen element, a substituted or unsubstituted C1 to C6 alkyl group, a substituted or unsubstituted C2 to C6 alkenyl group, a substituted or unsubstituted C1 to C6 heteroalkyl group, or a substituted or unsubstituted silyl group,
• provided that at least one of R7 to R11 is necessarily deuterium or at least one of R1 to R6 is necessarily deuterium,
• at least one of R1 to R6 are optionally linked with at least one of R7 to R11 to form a fused ring,
• R1 and R2 are optionally linked with each other to form a fused ring,
• R3 and R4 are optionally linked with each other to form a fused ring,
• R5 and R6 are optionally linked with each other to form a fused ring,
• at least one of R1 and R2 and at least one of R3 and R4 are optionally linked with each other to form a fused ring,
• at least one of R3 and R4 and at least one of R5 and R6 are optionally linked with each other to form a fused ring, and
• at least one of R1 and R2 and at least one of R5 and R6 are optionally linked with each other to form a fused ring.