H10P 14/69395
The material containing zirconium
Official title: {the material containing zirconium, e.g. ZrO2}
H10P14/69395 (The material containing zirconium) appears on 904 US grants and 1,120 published applications in this corpus.
Search patents in H10P- Granted patents
- 904
- Published applications
- 1,120
- Assignees
- 260
- Inventors
- 1,913
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 4 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 4 | 0 |
| 1999 | 5 | 0 |
| 2000 | 2 | 0 |
| 2001 | 10 | 7 |
| 2002 | 17 | 24 |
| 2003 | 29 | 38 |
| 2004 | 33 | 58 |
| 2005 | 29 | 51 |
| 2006 | 36 | 67 |
| 2007 | 26 | 51 |
| 2008 | 31 | 45 |
| 2009 | 39 | 45 |
| 2010 | 38 | 43 |
| 2011 | 39 | 35 |
| 2012 | 36 | 40 |
| 2013 | 36 | 43 |
| 2014 | 33 | 36 |
| 2015 | 38 | 41 |
| 2016 | 40 | 40 |
| 2017 | 41 | 52 |
| 2018 | 41 | 54 |
| 2019 | 40 | 54 |
| 2020 | 48 | 47 |
| 2021 | 46 | 56 |
| 2022 | 34 | 43 |
| 2023 | 33 | 50 |
| 2024 | 36 | 42 |
| 2025 | 32 | 40 |
| 2026 | 20 | 18 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Metal oxide thin film precursor, method of fabricating metal oxide thin film using the same, and semiconductor device including the metal oxide thin film29 Sep 2026US 12,747,258 B2University-Industry Cooperation Group of Kyung Hee University
- Method for forming region-selective thin film using selectivating agent8 Sep 2026US 12,729,427 B2EGTM Co., Ltd.
- Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium18 Aug 2026US 12,713,847 B2Kokusai Electric Corporation
- Semiconductor device having isolation structure to reduce current leakage4 Aug 2026US 12,701,743 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Radical plasma treatment for semiconductor metal gate stack4 Aug 2026US 12,701,938 B2APPLIED Materials.Inc.
- Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus24 Sep 2026US 2026/0286517 A1Kokusai Electric Corporation
- Method for manufacturing semiconductor device24 Sep 2026US 2026/0293543 A1Kioxia Corporation
- Selective deposition of metal oxides using silanes as an inhibitor24 Sep 2026US 2026/0293544 A1Lam Research Corporation
- Method of forming a gate stack including a dielectric layer13 Aug 2026US 2026/0239899 A1ASM IP Holding B. V.
- Methods and systems for filling a gap13 Aug 2026US 2026/0239900 A1ASM IP Holding B. V.
Most cited
By later US patents
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Method for manufacturing thin film using atomic layer deposition885US 6,270,572 B1Samsung Electronics Co., Ltd. · 2001
- Zirconium and/or hafnium oxynitride gate dielectric829US 6,013,553 ATexas Instruments Incorporated · 2000
- Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate767US 6,420,279 B1Sharp Laboratories of America, Inc. · 2002