Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium

A method of processing a substrate, comprising

• forming a film containing a first element and oxygen on the substrate by performing a cycle a predetermined number of times, the cycle including:
• (a) supplying a modifying agent to the substrate to form an adsorption layer containing the modifying agent physically adsorbed on a portion of a surface of the substrate;
• (b) supplying a precursor including a molecule containing the first element and ligand bonded to the first element to the substrate and causing the precursor to react with another portion of the surface of the substrate to form a first layer containing the first element while a first by-product containing the ligand desorbed from the first element in the precursor, which is generated during the formation of the first layer, is adsorbed on the adsorption layer;
• and
• (c) supplying an oxidizing agent to the substrate and causing the oxidizing agent to react with the first layer to modify the first layer into a second layer containing the first element and oxygen.