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US 2026/0239899 A1Published application
Method of forming a gate stack including a dielectric layer
AssigneeASM IP Holding B.V.
InventorsRohit Abraham John, Fu Tang, Eric James Shero
Life of this patent
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Abstract
A method for forming a gate stack includes providing a substrate, optionally forming an interfacial layer, forming a dielectric layer, and optionally forming a dipole layer, where the dielectric layer comprises hafnium, zirconium, and oxygen, and at least one of silicon or aluminum.
Claims20
A method for forming a gate stack, the method comprising:
- providing a substrate comprising a surface comprising an interfacial layer in a reaction chamber;
- and
- forming a dielectric layer on the interfacial layer by an atomic layer deposition process, wherein forming the dielectric layer comprises pulsing a hafnium precursor a plurality of times, pulsing a zirconium precursor at least once, pulsing an additive precursor at least once, and pulsing an oxygen reactant,
- wherein the additive precursor comprises a silicon precursor or an aluminum precursor, and
- wherein the hafnium precursor is pulsed at least once between each pulse of the zirconium precursor and each pulse of the additive precursor.
2 more elements
A method for forming a gate stack, the method comprising:
- providing a substrate comprising a surface comprising an interfacial layer in a reaction chamber;
- and
- forming a dielectric layer on the interfacial layer by an atomic layer deposition process, wherein the dielectric layer comprises a first sub-layer comprising hafnium silicate, hafnium silicon oxide, or hafnium aluminum oxide disposed directly on the interfacial layer and a second sub-layer comprising zirconium oxide, zirconium silicon oxide, or zirconium silicate disposed directly on the first sub-layer.
A method for forming a gate stack, the method comprising:
- providing a substrate comprising a surface comprising an interfacial layer in a reaction chamber;
- and
- forming a dielectric layer on the interfacial layer by an atomic layer deposition process, wherein forming the dielectric layer comprises pulsing a hafnium precursor a plurality of times, pulsing a zirconium precursor at least once, pulsing an additive precursor at least once, and pulsing an oxygen reactant,
- wherein the additive precursor comprises a silicon precursor or an aluminum precursor, and
- wherein the dielectric layer comprises a hafnium silicon oxide doped with zirconium, a hafnium silicate doped with zirconium, or a hafnium aluminum oxide doped with zirconium, wherein a ratio of a number of pulses of hafnium precursor to a number of pulses of the zirconium precursor during forming the dielectric layer is about 30:1 to about 7:1.
2 more elements
Dependencies are inferred from the claim text.