Zirconium and/or hafnium oxynitride gate dielectric
AssigneeTexas Instruments Incorporated
InventorsRobert M. Wallace, Richard A. Stoltz, Glen D. Wilk
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Abstract
A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide.
Claims32
A method of fabricating a field-effect device on an integrated circuit, the method comprising:
- providing a single-crystal silicon substrate;
- forming a metal oxynitride gate dielectric layer on the substrate,
- where the metal is selected from the group of hafnium, zirconium, and mixtures thereof;
- and
- forming a conductive gate overlying the gate dielectric layer.
Dependencies are inferred from the claim text.