H10P 14/69397
The material containing two or more metal elements
Official title: {the material containing two or more metal elements}
H10P14/69397 (The material containing two or more metal elements) appears on 758 US grants and 872 published applications in this corpus.
Search patents in H10P- Granted patents
- 758
- Published applications
- 872
- Assignees
- 255
- Inventors
- 1,327
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 4 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 5 | 0 |
| 1999 | 10 | 0 |
| 2000 | 6 | 0 |
| 2001 | 8 | 5 |
| 2002 | 16 | 25 |
| 2003 | 28 | 45 |
| 2004 | 22 | 52 |
| 2005 | 35 | 65 |
| 2006 | 39 | 73 |
| 2007 | 34 | 72 |
| 2008 | 41 | 40 |
| 2009 | 46 | 33 |
| 2010 | 41 | 40 |
| 2011 | 41 | 36 |
| 2012 | 45 | 37 |
| 2013 | 35 | 34 |
| 2014 | 31 | 24 |
| 2015 | 30 | 30 |
| 2016 | 24 | 23 |
| 2017 | 20 | 20 |
| 2018 | 18 | 24 |
| 2019 | 23 | 23 |
| 2020 | 21 | 25 |
| 2021 | 22 | 27 |
| 2022 | 16 | 25 |
| 2023 | 18 | 36 |
| 2024 | 20 | 27 |
| 2025 | 25 | 19 |
| 2026 | 16 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Ferroelectric devices and methods of forming the same25 Aug 2026US 12,720,759 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Radical plasma treatment for semiconductor metal gate stack4 Aug 2026US 12,701,938 B2APPLIED Materials.Inc.
- Method and systems for forming device structures including high-k dielectric layers and related device structures28 Jul 2026US 12,696,465 B2ASM IP Holding B. V.
- Epitaxial gallium nitride alloy ferroelectronics28 Jul 2026US 12,696,699 B2The Regents of the University of Michigan
- Inserting inhibition layer for inducing antiferroelectricity to ferroelectric structure16 Jun 2026US 12,660,293 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Inserting inhibition layer for inducing antiferroelectricity to ferroelectric structure17 Sep 2026US 2026/0282503 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Epitaxial nitride ferroelectronic devices30 Jul 2026US 2026/0223414 A1The Regents of the University of Michigan
- Method of manufacturing an ultra-thin insulating layer having reduced leakage current density23 Jul 2026US 2026/0209938 A1
- Method of forming structures including a vanadium or indium layer25 Jun 2026US 2026/0182268 A1ASM IP Holding B. V.
- Method for preparing thin ferroelectric or anti-ferroelectric devices18 Jun 2026US 2026/0173781 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
Most cited
By later US patents
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Methods of forming thin films by atomic layer deposition842US 6,468,924 B2Samsung Electronics Co., Ltd. · 2002
- Zirconium and/or hafnium oxynitride gate dielectric829US 6,013,553 ATexas Instruments Incorporated · 2000
- Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate767US 6,420,279 B1Sharp Laboratories of America, Inc. · 2002