Method and systems for forming device structures including high-k dielectric layers and related device structures
AssigneeASM IP Holding B.V.
InventorsFu Tang, Eric James Shero
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Abstract
Methods for forming a device structure including a high-k dielectric layer are disclosed. An exemplary method includes using a first cyclical deposition process to deposit a dielectric layer on a substrate and using a second cyclical deposition process to deposit a capping layer directly on the dielectric layer. The methods also include thermally annealing the dielectric layer with the capping layer directly thereon to form a high-k dielectric layer. Exemplary device structures are disclosure, such as metal-insulator-metal capacitor structures.
Claims12
A method of forming a device structure, the method comprising the steps of:
- providing a substrate within a reaction chamber;
- depositing a hafnium zirconium oxide layer on the substrate by performing one or more deposition super-cycles of a first cyclical deposition process;
- depositing a capping layer directly on the hafnium zirconium oxide layer by performing one or more deposition super-cycles of a second cyclical deposition process;
- thermally annealing the hafnium zirconium oxide layer with the capping layer directly thereon;
- crystallizing at least a portion of the hafnium zirconium oxide layer thereby forming a hafnium zirconium oxide high-k dielectric layer;
- selectively removing the capping layer;
- and
- depositing a metallic layer on the hafnium zirconium oxide high-k dielectric layer.
Dependencies are inferred from the claim text.