Ferroelectric devices and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorGeorgios Vellianitis
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Abstract
A ferroelectric device and methods of forming the same are described. In some embodiments, the method includes depositing a doped hafnium dioxide layer on a layer, and the doped hafnium dioxide layer has a first oxygen vacancy concentration. The method further includes performing an ultra-high vacuum anneal process on the doped hafnium dioxide layer to increase the first oxygen vacancy concentration to a second oxygen vacancy concentration and performing an oxygen anneal process on the doped hafnium dioxide layer to decrease the second oxygen vacancy concentration.
Claims20
A method, comprising:
- depositing a doped hafnium dioxide layer on a layer, wherein the doped hafnium dioxide layer has a first oxygen vacancy concentration, and the doped hafnium dioxide layer comprises a dopant selected from the group consisting of aluminum, lanthanum, titanium, tantalum, silicon, yttrium, scandium, gadolinium, and combinations thereof;
- performing an ultra-high vacuum anneal process on the doped hafnium dioxide layer to increase the first oxygen vacancy concentration to a second oxygen vacancy concentration, wherein a processing pressure of the ultra-high vacuum anneal process is less than 1e-3 Torr;
- and
- performing an oxygen anneal process on the doped hafnium dioxide layer to decrease the second oxygen vacancy concentration.
A method, comprising:
- depositing a doped hafnium dioxide layer on a layer, wherein the doped hafnium dioxide layer is partially crystallized with a first crystal phase, and a first dopant is introduced into the doped hafnium dioxide layer during the depositing of the doped hafnium dioxide layer, wherein the first dopant is selected from the group consisting of aluminum, lanthanum, titanium, tantalum, silicon, yttrium, scandium, gadolinium, and combinations thereof;
- performing an ion implantation process on the doped hafnium dioxide layer to amorphize the doped hafnium dioxide layer, wherein a second dopant is introduced into the doped hafnium dioxide layer during the ion implantation process, and the second dopant is selected from the group consisting of phosphorous, arsenic, boron, gallium, antimony, germanium, and silicon;
- and
- performing an anneal process on the doped hafnium dioxide layer to crystallize the doped hafnium dioxide layer with a second crystal phase, wherein the doped hafnium dioxide layer is a ferroelectric layer.
A method, comprising:
- depositing a doped hafnium dioxide layer on a layer, wherein the doped hafnium dioxide layer has a first oxygen vacancy concentration, and the doped hafnium dioxide layer comprises a dopant selected from the group consisting of aluminum, lanthanum, titanium, tantalum, silicon, yttrium, scandium, gadolinium, and combinations thereof;
- and
- performing an ultra-high vacuum anneal process on the doped hafnium dioxide layer to increase the first oxygen vacancy concentration to a second oxygen vacancy concentration, wherein the ultra-high vacuum anneal process is performed at a processing temperature ranging from about 20 degrees Celsius to about 450 degrees Celsius and at a processing pressure less than 1e-3 Torr.
Dependencies are inferred from the claim text.