Method of forming structures including a vanadium or indium layer

A method, comprising:

• providing a substrate within a reaction chamber, the substrate comprising a semiconductor material and a dielectric material overlying the semiconductor material;
• and
• depositing, via an atomic layer deposition process, a vanadium layer comprising vanadium nitride onto the substrate such that the gate dielectric is between the vanadium layer and the semiconductor material,
• wherein the vanadium layer is configured to function as at least a portion of a gate electrode of a semiconductor device.

A method, comprising:

• providing a substrate within a reaction chamber, the substrate comprising a semiconductor material and a dielectric material overlying the semiconductor material;
• and
• depositing, via a hybrid deposition process, a vanadium layer comprising one or more of vanadium nitride and vanadium carbon nitride, the hybrid deposition process comprising one or more deposition cycles, wherein each deposition cycle comprises:
• flowing a vanadium precursor comprising at least one of a vanadium halide or a vanadium oxyhalide into the reaction chamber;
• and
• pulsing a nitrogen reactant into the reaction chamber such that at least a portion of a nitrogen reactant pulse temporally overlaps with the flowing the vanadium precursor into the reaction chamber.