Methods of forming thin films by atomic layer deposition
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung-hwan Lee, Yeong-kwan Kim, Dong-chan Kim, Young-wook Park
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Abstract
Methods of forming thin films include forming a first layer comprising a first element that is chemisorbed to a surface of a substrate, by exposing the surface to a first source gas having molecules therein that comprise the first element and a halogen. A step is then performed to expose the first layer to an activated hydrogen gas so that halogens associated with the first layer become bound to hydrogen provided by the activated hydrogen gas. The first layer may then be converted to a thin film comprising the first element and a second element, by exposing a surface of the first layer to a second source gas having molecules therein that comprise the second element.
Claims29
A method for forming a thin film comprising:
- providing a first reactant containing a halogen on a semiconductor substrate in order to chemisorb a first reactant adsorption layer combined with the halogen on the semiconductor substrate;
- providing activated hydrogen gas to the first reactant adsorption layer in order to remove the halogen from the first reactant adsorption layer;
- and then
- providing a second reactant to the first reactant adsorption layer in order to chemisorb the second reactant into the first reactant adsorption layer and define the thin film.
A method for forming a thin film comprising the steps of:
- providing a silicon source gas containing a halogen to a semiconductor substrate in order to chemisorb a silicon adsorption layer combined with the halogen on the semiconductor substrate;
- providing activated hydrogen gas to the silicon adsorption layer in order to remove the halogen from the silicon adsorption layer;
- and then providing a nitrogen source gas to the silicon adsorption layer to form a silicon nitride layer.
A method of forming a film, comprising the steps of:
- forming a first layer that comprises a first element and is chemisorbed to a surface of a substrate, by exposing the surface to a first source gas having molecules therein that comprise the first element and a halogen;
- then
- exposing the first layer to an activated hydrogen gas so that halogens associated with the first layer become bound to hydrogen provided by the activated hydrogen gas;
- and then
- converting the first layer to a thin film comprising the first element and a second element, by exposing a surface of the first layer to a second source gas having molecules therein that comprise the second element.
Dependencies are inferred from the claim text.