H10P 14/69392
The material containing hafnium
Official title: {the material containing hafnium, e.g. HfO2}
H10P14/69392 (The material containing hafnium) appears on 1,433 US grants and 1,822 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,433
- Published applications
- 1,822
- Assignees
- 347
- Inventors
- 2,782
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 3 | 0 |
| 2000 | 2 | 0 |
| 2001 | 14 | 7 |
| 2002 | 19 | 34 |
| 2003 | 33 | 58 |
| 2004 | 36 | 78 |
| 2005 | 47 | 96 |
| 2006 | 58 | 140 |
| 2007 | 58 | 84 |
| 2008 | 55 | 76 |
| 2009 | 62 | 73 |
| 2010 | 74 | 61 |
| 2011 | 59 | 43 |
| 2012 | 47 | 51 |
| 2013 | 44 | 49 |
| 2014 | 48 | 49 |
| 2015 | 65 | 67 |
| 2016 | 66 | 85 |
| 2017 | 73 | 78 |
| 2018 | 62 | 84 |
| 2019 | 65 | 86 |
| 2020 | 89 | 98 |
| 2021 | 82 | 90 |
| 2022 | 55 | 65 |
| 2023 | 60 | 94 |
| 2024 | 56 | 74 |
| 2025 | 57 | 65 |
| 2026 | 33 | 37 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Metal oxide thin film precursor, method of fabricating metal oxide thin film using the same, and semiconductor device including the metal oxide thin film29 Sep 2026US 12,747,258 B2University-Industry Cooperation Group of Kyung Hee University
- Method of gap filling for semiconductor device15 Sep 2026US 12,740,083 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming region-selective thin film using selectivating agent8 Sep 2026US 12,729,427 B2EGTM Co., Ltd.
- Ferroelectric devices and methods of forming the same25 Aug 2026US 12,720,759 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Treatments to enhance material structures25 Aug 2026US 12,721,061 B2APPLIED Materials.Inc.
- Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus24 Sep 2026US 2026/0286517 A1Kokusai Electric Corporation
- Method for manufacturing semiconductor device24 Sep 2026US 2026/0293543 A1Kioxia Corporation
- Selective deposition of metal oxides using silanes as an inhibitor24 Sep 2026US 2026/0293544 A1Lam Research Corporation
- High-k isolation of fin structures24 Sep 2026US 2026/0293548 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Device structure with ferroelectric layer24 Sep 2026US 2026/0293549 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Method for manufacturing thin film using atomic layer deposition885US 6,270,572 B1Samsung Electronics Co., Ltd. · 2001
- Zirconium and/or hafnium oxynitride gate dielectric829US 6,013,553 ATexas Instruments Incorporated · 2000
- Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate767US 6,420,279 B1Sharp Laboratories of America, Inc. · 2002