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US 2026/0293549 A1Published application
Device structure with ferroelectric layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsOreste MADIA, Georgios VELLIANITIS
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Abstract
A device structure is provided. The device structure includes a substrate and a carbon-containing layer over the substrate. The device structure also includes a crystallized ferroelectric layer over the carbon-containing layer and a material layer interfacing the crystallized ferroelectric layer. The material layer and the carbon-containing layer are made of different materials.
Claims20
A device structure, comprising:
- a substrate;
- a carbon-containing layer over the substrate;
- a crystallized ferroelectric layer extending along a surface of the carbon-containing layer, wherein the crystallized ferroelectric layer is as wide as or wider than the carbon-containing layer;
- and
- a material layer interfacing the crystallized ferroelectric layer, wherein the material layer comprises a metal material or a semiconductor material.
2 more elements
The device structure as claimed in claim 16 further comprising:
- a first electrode between the carbon-containing layer and the substrate, wherein the material layer is a second electrode.
A device structure, comprising:
- a carbon-containing stripe;
- a crystallized ferroelectric layer extending along a first sidewall, an upper surface, and a second sidewall of the carbon-containing layer;
- and
- a semiconductor layer interfacing the crystallized ferroelectric layer.
1 more element
A device structure, comprising:
- a substrate;
- a carbon-containing layer over the substrate;
- a crystallized ferroelectric layer over the carbon-containing layer;
- and
- a material layer interfacing the crystallized ferroelectric layer, wherein the material layer and the carbon-containing layer are made of different materials.
2 more elements
Dependencies are inferred from the claim text.