High-k isolation of fin structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorKang Huang
Life of this patent
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Abstract
Provided are semiconductor devices and methods for fabricating such devices. An exemplary method includes forming fin structures separated by an isolation material; depositing a high-k material over the fin structures and isolation material, wherein the high-k material includes lower portions located between fin structures and an upper portion located above the fin structures; depositing a topography-improving capping layer over the high-k material; performing a chemical mechanical planarization (CMP) process to remove the capping layer and the upper portion of the high-k material and to define high-k insulation segments.
Claims20
A method for fabricating a semiconductor device, comprising:
- forming fin structures separated by an isolation material;
- conformally depositing a spacer layer over the fin structures and the isolation material;
- depositing a dielectric material over the spacer layer;
- recessing the dielectric material and the spacer layer above the fin structures to form gaps laterally adjacent upper portions of the fin structures;
- depositing a high-k material to fill the gaps and over the fin structures;
- and
- performing a planarization process to remove an upper portion of the high-k material and define high-k insulation segments laterally adjacent the fin structures.
A semiconductor device comprising:
- a fin structure having an uppermost surface;
- a gate structure located over the fin structure;
- and
- a high-k isolation region comprising hafnium oxide laterally adjacent to the fin structure, wherein the high-k isolation region has a planar top surface and a non-planar bottom surface.
A semiconductor device comprising:
- a fin structure having an uppermost surface;
- a gate structure located over the fin structure;
- and
- a hafnium oxide isolation region laterally adjacent to the fin structure, wherein the hafnium oxide isolation region has a top surface located at a first height above the uppermost surface of the fin structure and a bottom surface located at a second height below the uppermost surface of the fin structure, wherein a ratio of the first height to the second height is from 1:10 to 10:1.
Dependencies are inferred from the claim text.