H10P 14/69394
The material containing titanium
Official title: {the material containing titanium, e.g. TiO2}
H10P14/69394 (The material containing titanium) appears on 994 US grants and 1,075 published applications in this corpus.
Search patents in H10P- Granted patents
- 994
- Published applications
- 1,075
- Assignees
- 282
- Inventors
- 2,168
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 3 | 0 |
| 1994 | 5 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 5 | 0 |
| 1998 | 4 | 0 |
| 1999 | 9 | 0 |
| 2000 | 13 | 0 |
| 2001 | 19 | 10 |
| 2002 | 21 | 23 |
| 2003 | 29 | 31 |
| 2004 | 25 | 35 |
| 2005 | 22 | 34 |
| 2006 | 26 | 51 |
| 2007 | 22 | 41 |
| 2008 | 29 | 21 |
| 2009 | 27 | 25 |
| 2010 | 26 | 25 |
| 2011 | 21 | 28 |
| 2012 | 22 | 30 |
| 2013 | 32 | 38 |
| 2014 | 35 | 39 |
| 2015 | 58 | 68 |
| 2016 | 63 | 66 |
| 2017 | 46 | 56 |
| 2018 | 56 | 59 |
| 2019 | 54 | 56 |
| 2020 | 59 | 74 |
| 2021 | 59 | 54 |
| 2022 | 37 | 50 |
| 2023 | 39 | 55 |
| 2024 | 41 | 50 |
| 2025 | 39 | 36 |
| 2026 | 26 | 20 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Titanium nitride gapfill processes for semiconductor devices25 Aug 2026US 12,721,067 B2APPLIED Materials.Inc.
- Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium18 Aug 2026US 12,713,847 B2Kokusai Electric Corporation
- Method of manufacturing semiconductor devices including a cap insulating layer11 Aug 2026US 12,707,905 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Radical plasma treatment for semiconductor metal gate stack4 Aug 2026US 12,701,938 B2APPLIED Materials.Inc.
- Bracing structure, semiconductor device with the same, and method for fabricating the same28 Jul 2026US 12,696,701 B2Nanya Technology Corporation
- Method for manufacturing semiconductor device24 Sep 2026US 2026/0293543 A1Kioxia Corporation
- Selective deposition of metal oxides using silanes as an inhibitor24 Sep 2026US 2026/0293544 A1Lam Research Corporation
- Carrier structure and methods of forming the same20 Aug 2026US 2026/0248043 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods and systems for filling a gap13 Aug 2026US 2026/0239900 A1ASM IP Holding B. V.
- Methods for forming low resistivity contacts9 Jul 2026US 2026/0198279 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Method for manufacturing thin film using atomic layer deposition885US 6,270,572 B1Samsung Electronics Co., Ltd. · 2001
- Methods of forming thin films by atomic layer deposition842US 6,468,924 B2Samsung Electronics Co., Ltd. · 2002
- Film deposition apparatus and film deposition method738US 8,506,713 B2Tokyo Electron Limited · 2013
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006