Carrier structure and methods of forming the same

Abstract

A carrier structure and methods of forming and using the same are described. In some embodiments, the method includes forming one or more devices over a substate, forming a first interconnect structure over the one or more devices, and bonding the first interconnect structure to a carrier structure. The carrier structure includes a semiconductor substate, a release layer, and a first dielectric layer, and the release layer includes a metal nitride. The method further includes flipping over the one or more devices so the carrier structure is located at a bottom, performing backside processes, flipping over the one or more devices so the carrier structure is located at a top, and exposing the carrier structure to IR lights. Portions of the release layer are separated from the first dielectric layer.

Dependencies are inferred from the claim text.