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AssigneeApplied Materials, Inc.
InventorsMuthukumar Kaliappan, Zhebo Chen, Michael Haverty, Yongjing Lin, Shih Chung Chen, Gang Shen, Alexander Jansen, Janardhan Devrajan
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One or more embodiments of the disclosure are directed to methods of forming structures that are useful for FEOL and BEOL processes. Embodiments of the present disclosure advantageously provide methods of depositing titanium nitride (TiN) in high aspect ratio (AR) structures with small dimensions. Some embodiments advantageously provide seam-free high-quality TiN films to fill high AR trenches with small dimensions. Embodiments of the present disclosure advantageously provide methods of filling 3D structures, such as finFETs, GAAs, and the like, without creating a seam. The methods include selective deposition processes using blocking compounds in order to provide seam-free TiN gapfill in 3D structures, such as GAA devices.
A method of forming a semiconductor device, the method comprising:
A method of forming a gate-all-around (GAA) transistor, the method comprising:
A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing chamber, causes the processing chamber to:
Dependencies are inferred from the claim text.