RF pulsing assisted tungsten-containing film deposition

A semiconductor processing method comprising:

• providing a tungsten-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber, wherein a substrate is disposed within the processing region of the semiconductor processing chamber;
• forming a plasma of the tungsten-containing precursor and the carbon-containing precursor in the processing region, wherein the plasma is at least partially formed by an RF power operating at between 500 W and 2,000 W, at a pulsing frequency less than or equal to 10,000 Hz, and at a duty cycle between 10% and 90%;
• and
• forming a layer of material on the substrate, wherein the layer of material comprises a tungsten-containing material, wherein the layer of material is characterized by a tungsten content of greater than or equal to 30 at. %, and wherein the layer of material is characterized by an average surface roughness (Ra) of less than or equal to 0.7 nm.

A semiconductor processing method comprising:

• providing a tungsten-containing precursor and a carbon-containing precursor to a processing region of a semiconductor processing chamber, wherein a substrate is disposed within the processing region of the semiconductor processing chamber;
• forming a plasma of the tungsten-containing precursor and the carbon-containing precursor in the processing region, wherein the plasma is at least partially formed by an RF power operating at a pulsing frequency less than or equal to 10,000 Hz, and at a duty cycle between 10% and 90%;
• and
• forming a layer of material on the substrate, wherein the layer of material comprises a tungsten-containing material, wherein the layer of material is characterized by a tungsten content of greater than or equal to 30 at. %, wherein the layer of material is characterized by an average surface roughness (Ra) of less than or equal to 0.7 nm, and wherein the layer of material is characterized by an extinction coefficient of greater than or equal to 2.5 at 633 nm.