H10P 14/69398
The material having a perovskite structure
Official title: {the material having a perovskite structure, e.g. BaTiO3}
H10P14/69398 (The material having a perovskite structure) appears on 1,088 US grants and 952 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,088
- Published applications
- 952
- Assignees
- 320
- Inventors
- 1,700
- Latest grant
- 2 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 4 | 0 |
| 1993 | 6 | 0 |
| 1994 | 5 | 0 |
| 1995 | 9 | 0 |
| 1996 | 10 | 0 |
| 1997 | 22 | 0 |
| 1998 | 41 | 0 |
| 1999 | 41 | 0 |
| 2000 | 60 | 0 |
| 2001 | 80 | 38 |
| 2002 | 95 | 114 |
| 2003 | 89 | 137 |
| 2004 | 90 | 112 |
| 2005 | 69 | 76 |
| 2006 | 55 | 87 |
| 2007 | 63 | 55 |
| 2008 | 42 | 55 |
| 2009 | 43 | 49 |
| 2010 | 28 | 28 |
| 2011 | 30 | 20 |
| 2012 | 18 | 14 |
| 2013 | 25 | 32 |
| 2014 | 16 | 18 |
| 2015 | 18 | 15 |
| 2016 | 15 | 16 |
| 2017 | 16 | 6 |
| 2018 | 8 | 10 |
| 2019 | 7 | 7 |
| 2020 | 6 | 16 |
| 2021 | 5 | 7 |
| 2022 | 13 | 15 |
| 2023 | 28 | 13 |
| 2024 | 10 | 9 |
| 2025 | 11 | 2 |
| 2026 | 5 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Epitaxial strontium titanate on silicon2 Jun 2026US 12,648,373 B2Psiquantum, Corp.
- Fabricating non-linear polar material based capacitors for memory and logic19 May 2026US 12,635,145 B1Kepler Computing Inc.
- Manganese or scandium doped ferroelectric device and bit-cell12 May 2026US 12,628,350 B2Kepler Computing Inc.
- Perovskite optoelectronic devices and method for manufacturing the same13 Jan 2026US 12,522,680 B2Sn Display Co., Ltd.
- Ferroelectric or paraelectric based low power multiplier13 Jan 2026US 12,524,204 B1Kepler Computing Inc.
- Strontium compound, method of manufacturing thin film containing strontium and semiconductor device using the same11 Jun 2026US 2026/0159530 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method of manufacturing the same30 Oct 2025US 2025/0338569 A1Renesas Electronics Corporation
- Capacitor, memory and manufacturing method of memory11 Sep 2025US 2025/0287561 A1Swaysure Technology Co., Ltd.
- Method of selective film deposition and semiconductor feature made by the method7 Nov 2024US 2024/0371947 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of producing tin-based perovskite layer15 Aug 2024US 2024/0270595 A1Ckd Corporation
Most cited
By later US patents
- Method for manufacturing thin film using atomic layer deposition885US 6,270,572 B1Samsung Electronics Co., Ltd. · 2001
- Methods of forming thin films by atomic layer deposition842US 6,468,924 B2Samsung Electronics Co., Ltd. · 2002
- Film deposition apparatus and film deposition method738US 8,506,713 B2Tokyo Electron Limited · 2013
- Methods and apparatus for material deposition577US 5,119,760 ASymetrix Corporation · 1992
- Semiconductor device dielectric interface layer544US 8,728,832 B2ASM IP Holdings B.V. · 2014