Semiconductor device dielectric interface layer
AssigneeASM IP Holdings B.V.
InventorsPetri Raisanen, Michael Givens, Mohith Verghese
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Abstract
Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.
Claims20
A method for determining a conversion time associated with converting an exposed surface of a substrate into a continuous monolayer of a first dielectric material in a gate assembly without exposing the first dielectric material to a vacuum break, the method comprising:
- converting the exposed surface of the substrate into the first dielectric material via reaction of an activated oxygen species with the exposed surface of the substrate for a preselected time;
- forming a second dielectric material on the first dielectric material without an air break;
- measuring a thickness of the second dielectric material;
- and
- setting the preselected time as the conversion time if the thickness matches a preselected thickness.
Dependencies are inferred from the claim text.