Epitaxial strontium titanate on silicon
AssigneePsiquantum, Corp.
InventorYong Liang
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Abstract
A method for processing a substrate includes positioning a silicon substrate in a deposition chamber. One or more intermediate layers are deposited on a surface of the silicon. The one or more intermediate layers can include strontium, which combines with the silicon to form strontium silicide. Alternatively, the one or more intermediate layers comprise germanium. A layer of amorphous strontium titanate is deposited on the one or more intermediate layers in a transient environment in which oxygen pressure is reduced while temperature is increased. The substrate is then exposed to an oxidizing and annealing atmosphere that oxidizes the one or more intermediate layers and converts the layer of amorphous strontium titanate to crystalline strontium titanate.
Claims20
A method for processing a substrate, the method comprising:
- positioning the substrate in a deposition chamber, wherein the substrate comprises a wafer of single crystal silicon having a top surface;
- forming one or more intermediate layers on the top surface of the wafer of single crystal silicon;
- forming an amorphous strontium titanium oxide layer on the one or more intermediate layers using molecular-beam epitaxy (MBE) in an environment in which oxygen pressure is reduced while temperature is increased;
- converting the amorphous strontium titanium oxide layer to a crystalline strontium titanium oxide layer;
- after converting the amorphous strontium titanium oxide layer to a crystalline strontium titanium oxide layer, oxidizing the one or more intermediate layers to form a transition layer disposed between the substrate and the crystalline strontium titanium oxide layer;
- and
- increasing a thickness of the crystalline strontium titanium oxide layer.
A method comprising:
- providing a silicon-based substrate;
- depositing a layer containing strontium on the silicon-based substrate;
- providing an oxygen environment;
- performing molecular-beam epitaxy (MBE) in the oxygen environment to form an amorphous strontium titanium oxide layer on the layer containing strontium, wherein performing MBE in the oxygen environment comprises:
- reducing oxygen pressure of the oxygen environment;
- and
- increasing temperature of the oxygen environment;
- converting the amorphous strontium titanium oxide layer to a crystalline strontium titanium oxide layer;
- after converting the amorphous strontium titanium oxide layer to the crystalline strontium titanium oxide layer, oxidizing the layer containing strontium to form an amorphous strontium oxide layer disposed between the silicon-based substrate and the crystalline strontium titanium oxide layer;
- and
- increasing a thickness of the crystalline strontium titanium oxide layer.
A method for processing a substrate, the method comprising:
- positioning the substrate in a deposition chamber, wherein the substrate comprises a top layer of silicon having a top surface;
- forming one or more intermediate layers on the top surface of the top layer of silicon;
- forming an amorphous layer of strontium titanium oxide on the one or more intermediate layers using molecular-beam epitaxy (MBE) in an environment in which oxygen pressure is reduced while temperature is increased;
- converting the amorphous layer of strontium titanium oxide to a crystalline layer of strontium titanium oxide;
- and
- after converting the amorphous layer of strontium titanium oxide to the crystalline layer of strontium titanium oxide, oxidizing the one or more intermediate layers to form a transition layer disposed between the substrate and the crystalline layer of strontium titanium oxide.
Dependencies are inferred from the claim text.