H10P 14/6921
Containing silicon
Official title: {containing silicon}
H10P14/6921 (Containing silicon) appears on 10,508 US grants and 10,536 published applications in this corpus.
Search patents in H10P- Granted patents
- 10,508
- Published applications
- 10,536
- Assignees
- 1,250
- Inventors
- 15,248
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 19 | 0 |
| 1977 | 28 | 0 |
| 1978 | 21 | 0 |
| 1979 | 9 | 0 |
| 1980 | 12 | 0 |
| 1981 | 9 | 0 |
| 1982 | 18 | 0 |
| 1983 | 12 | 0 |
| 1984 | 11 | 0 |
| 1985 | 32 | 0 |
| 1986 | 31 | 0 |
| 1987 | 25 | 0 |
| 1988 | 33 | 0 |
| 1989 | 29 | 0 |
| 1990 | 23 | 0 |
| 1991 | 33 | 0 |
| 1992 | 35 | 0 |
| 1993 | 41 | 0 |
| 1994 | 60 | 0 |
| 1995 | 61 | 0 |
| 1996 | 59 | 0 |
| 1997 | 70 | 0 |
| 1998 | 105 | 0 |
| 1999 | 184 | 0 |
| 2000 | 272 | 0 |
| 2001 | 428 | 162 |
| 2002 | 372 | 408 |
| 2003 | 427 | 452 |
| 2004 | 379 | 456 |
| 2005 | 304 | 514 |
| 2006 | 339 | 526 |
| 2007 | 327 | 395 |
| 2008 | 253 | 335 |
| 2009 | 258 | 326 |
| 2010 | 288 | 257 |
| 2011 | 279 | 223 |
| 2012 | 192 | 229 |
| 2013 | 228 | 223 |
| 2014 | 219 | 287 |
| 2015 | 349 | 527 |
| 2016 | 504 | 525 |
| 2017 | 444 | 517 |
| 2018 | 509 | 535 |
| 2019 | 488 | 615 |
| 2020 | 555 | 673 |
| 2021 | 509 | 551 |
| 2022 | 405 | 468 |
| 2023 | 347 | 422 |
| 2024 | 353 | 387 |
| 2025 | 335 | 346 |
| 2026 | 185 | 177 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Treating silicon nitride based dielectric films6 Oct 2026US 12,757,657 B2APPLIED Materials.Inc.
- Semiconductor structure, semiconductor device with air spacers, and method for fabricating the same6 Oct 2026US 12,757,738 B2Nanya Technology Corporation
- Substrate processing apparatus, method of manufacturing semiconductor device, method of processing substrate, and recording medium29 Sep 2026US 12,747,501 B2Kokusai Electric Corporation
- Alkoxydisiloxanes and dense organosilica films made therefrom29 Sep 2026US 12,751,224 B2Versum Materials US, LLC
- Etching method, plasma processing apparatus, substrate processing system, and program29 Sep 2026US 12,751,227 B2Tokyo Electron Limited
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- Selective Deposition of Barrier Layer8 Oct 2026US 2026/0314362 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and Method for Deep Trench Capacitor with Reduced Deformation1 Oct 2026US 2026/0304797 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming gate-all-around (gaa) devices1 Oct 2026US 2026/0304842 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Fin structure of FinFET1,337US 9,093,530 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001