H10P 14/69215
The material being a silicon oxide
Official title: {the material being a silicon oxide, e.g. SiO2}
H10P14/69215 (The material being a silicon oxide) appears on 6,575 US grants and 6,544 published applications in this corpus.
Search patents in H10P- Granted patents
- 6,575
- Published applications
- 6,544
- Assignees
- 925
- Inventors
- 10,770
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 15 | 0 |
| 1977 | 22 | 0 |
| 1978 | 16 | 0 |
| 1979 | 8 | 0 |
| 1980 | 8 | 0 |
| 1981 | 5 | 0 |
| 1982 | 11 | 0 |
| 1983 | 10 | 0 |
| 1984 | 5 | 0 |
| 1985 | 14 | 0 |
| 1986 | 23 | 0 |
| 1987 | 19 | 0 |
| 1988 | 17 | 0 |
| 1989 | 19 | 0 |
| 1990 | 15 | 0 |
| 1991 | 17 | 0 |
| 1992 | 23 | 0 |
| 1993 | 33 | 0 |
| 1994 | 48 | 0 |
| 1995 | 40 | 0 |
| 1996 | 38 | 0 |
| 1997 | 46 | 0 |
| 1998 | 72 | 0 |
| 1999 | 118 | 0 |
| 2000 | 164 | 0 |
| 2001 | 255 | 89 |
| 2002 | 186 | 212 |
| 2003 | 216 | 210 |
| 2004 | 184 | 207 |
| 2005 | 151 | 233 |
| 2006 | 154 | 235 |
| 2007 | 162 | 173 |
| 2008 | 115 | 164 |
| 2009 | 118 | 153 |
| 2010 | 143 | 143 |
| 2011 | 134 | 100 |
| 2012 | 105 | 134 |
| 2013 | 113 | 122 |
| 2014 | 125 | 189 |
| 2015 | 219 | 393 |
| 2016 | 376 | 393 |
| 2017 | 332 | 379 |
| 2018 | 363 | 387 |
| 2019 | 350 | 473 |
| 2020 | 433 | 506 |
| 2021 | 388 | 403 |
| 2022 | 284 | 336 |
| 2023 | 249 | 273 |
| 2024 | 260 | 273 |
| 2025 | 226 | 239 |
| 2026 | 128 | 125 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Treating silicon nitride based dielectric films6 Oct 2026US 12,757,657 B2APPLIED Materials.Inc.
- Semiconductor structure, semiconductor device with air spacers, and method for fabricating the same6 Oct 2026US 12,757,738 B2Nanya Technology Corporation
- Substrate processing apparatus, method of manufacturing semiconductor device, method of processing substrate, and recording medium29 Sep 2026US 12,747,501 B2Kokusai Electric Corporation
- Etching method, plasma processing apparatus, substrate processing system, and program29 Sep 2026US 12,751,227 B2Tokyo Electron Limited
- Fin structures29 Sep 2026US 12,751,257 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Selective Deposition of Barrier Layer8 Oct 2026US 2026/0314362 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Structure and Method for Deep Trench Capacitor with Reduced Deformation1 Oct 2026US 2026/0304797 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming gate-all-around (gaa) devices1 Oct 2026US 2026/0304842 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for forming the same1 Oct 2026US 2026/0305198 A1VisEra Technologies Company Limited
- Precursors for low dielectric film deposition1 Oct 2026US 2026/0305199 A1Lam Research Corporation
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Fin structure of FinFET1,337US 9,093,530 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Atomic layer deposition with nitrate containing precursors1,176US 6,203,613 B1International Business Machines Corporation · 2001