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US 12,751,227 B2Granted
Etching method, plasma processing apparatus, substrate processing system, and program
AssigneeTokyo Electron Limited
InventorsTakuma Sato, Shota Yoshimura, Shinya Morikita
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Abstract
An etching method includes (a) providing a substrate. The substrate includes a first region and a second region. The second region contains silicon oxide, and the first region contains a material different from a material for the second region. The etching method further includes (b) forming a deposit preferentially on the first region with first plasma generated from a first process gas containing a carbon monoxide gas. The etching method further includes (c) etching the second region.
Claims16
An etching method, comprising:
- (a) providing a substrate, the substrate including a first region and a second region, the first region and the second region being exposed, the second region comprising silicon oxide, and the first region comprising silicon nitride;
- (b) forming a deposit selectively on the first region and not on the second region with a first plasma generated from a first process gas containing a carbon monoxide gas or a carbonyl sulfide gas;
- and
- (c) plasma etching the second region while the first region is covered by the deposit.
1 more element
Dependencies are inferred from the claim text.