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US 12,751,257 B2Granted
Fin structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Yang Lu, Tz-Shian Chen, Li-Ting Wang, Huicheng Chang, Yee-Chia Yeo
Life of this patent
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Abstract
Provided is a device including a fin structure and methods for forming such a device. A method includes forming an initial fin having a sidewall. Further, the method includes forming an additional layer of fin material over the sidewall, wherein the additional layer has a thickness. Also, the method includes adjusting the thickness of the additional layer of fin material to form a fin structure with a desired critical dimension.
Claims18
A method, comprising:
- forming a fin having a sidewall;
- forming an additional layer of fin material over the sidewall, wherein the additional layer has an initial thickness greater than a desired thickness;
- forming a second layer over the additional layer of fin material, wherein the second layer has a first region with a thinner thickness and a second region with a thicker thickness greater than the thinner thickness;
- and
- reducing the initial thickness of the additional layer of fin material through controlled oxidation comprising thickening the second layer in the first region relative to the second region to reduce a thickness differential of the second layer to form a fin structure with the desired thickness.
2 more elements
A method, comprising:
- forming a semiconductor structure having a sidewall;
- forming an additional layer of semiconductor material over the sidewall, wherein the additional layer has an initial thickness;
- forming a second layer over the additional layer, wherein the second layer has a first region with a thinner thickness and a second region with a thicker thickness greater than the thinner thickness;
- and
- adjusting the initial thickness of the additional layer of semiconductor material to form a combined structure with a desired thickness, wherein adjusting the thickness of the additional layer of semiconductor material comprises:
- determining an amount of the additional layer to be consumed;
- and
- performing a controlled oxidation for a duration selected based on the amount of the additional layer to be consumed, wherein performing the controlled oxidation comprises thickening the second layer in the first region relative to the second region to reduce a thickness differential of the second layer.
5 more elements
A method, comprising:
- forming a semiconductor device element having a sidewall;
- forming an additional layer of material over the element;
- forming a second layer over the additional layer, wherein the second layer has a thin portion with a first initial thickness and a thick portion with a second initial thickness greater than the first initial thickness;
- and
- performing a process to reduce a thickness differential between the thin portion and the thick portion, wherein performing the process comprises thickening the thin portion to a first thickness greater than the first initial thickness.
2 more elements
Dependencies are inferred from the claim text.