Precursors for low dielectric film deposition

A method for deposition of a doped silicon oxide film, the method comprising:

• (a) providing a substrate in a process chamber;
• (b) exposing the substrate to a silicon-containing precursor, wherein the silicon-containing precursor includes at least one Si—F bond, at least one Si—C bond, or at least one Si—C bond and at least one Si—F bond and wherein the silicon-containing precursor comprises one to five silicon atoms;
• (c) purging the process chamber with an inert gas;
• (d) exposing the substrate to a plasma of an oxidant or a plasma of a reducing agent;
• (e) purging the process chamber with an inert gas;
• and
• (f) depositing a doped silicon oxide film,
• wherein the doped silicon oxide film comprises a film doped with C, F or a combination thereof;
• wherein the method comprises one or more cycles of operations (a)-(f);
• and
• wherein the doped silicon oxide film has a dielectric constant of about 3.9 or less.