Substrate processing apparatus, method of manufacturing semiconductor device, method of processing substrate, and recording medium

A method of processing a substrate, the method comprising:

• loading a plurality of substrates into a reaction tube via a bottom opening and holding the plurality of substrates in a substrate arrangement region;
• and
• processing the substrates by supplying a hydrogen-containing gas into the reaction tube from a plurality of locations corresponding to a first region, in which a plurality of product substrates are arranged, in the substrate arrangement region, from a first nozzle arranged to at least correspond to the first region, supplying an oxygen-containing gas into the reaction tube from a position corresponding to the first region from a second nozzle arranged to correspond to the first region, and supplying a dilution gas into the reaction tube from a position corresponding to a second region, in which a plurality of dummy substrates are arranged closer to the bottom opening than the first region, from a third nozzle arranged to correspond to the second region,
• wherein, in the act of processing the substrates, the supply of the hydrogen-containing gas from the first nozzle and the supply of the dilution gas from the third nozzle are controlled such that a concentration of the hydrogen-containing gas in the second region is lower than a concentration of the hydrogen-containing gas in the first region,
• wherein an interior of the reaction tube is exhausted,
• wherein the hydrogen-containing gas is supplied from the first nozzle including a plurality of multi-hole nozzles including injection holes corresponding to a divided region obtained by dividing a region including the first region and not including the second region in a substrate arrangement direction,
• wherein the reaction tube includes a ceiling gas supplier installed at a ceiling that is a closed end opposite to the bottom opening, the ceiling gas supplier being configured to supply an inert gas into the reaction tube,
• wherein the second nozzle includes injection holes corresponding to the product substrates arranged in the first region in a one-to-one relationship,
• wherein the injection holes of the second nozzle are not arranged to correspond to a third region in which a plurality of dummy substrates are arranged in the substrate arrangement region to be closest to the ceiling, and
• wherein a part of the injection holes of the first nozzle are arranged to correspond to the third region.

A method of manufacturing a semiconductor device, comprising:

• loading a plurality of substrates into a reaction tube via a bottom opening and holding the plurality of substrates in a substrate arrangement region;
• and
• processing the substrates by supplying a hydrogen-containing gas into the reaction tube from a plurality of locations corresponding to a first region, in which a plurality of product substrates are arranged, in the substrate arrangement region, from a first nozzle arranged to at least correspond to the first region, supplying an oxygen-containing gas into the reaction tube from a position corresponding to the first region from a second nozzle arranged to correspond to the first region, and supplying a dilution gas into the reaction tube from a position corresponding to a second region, in which a plurality of dummy substrates are arranged closer to the bottom opening than the first region, from a third nozzle arranged to correspond to the second region,
• wherein, in the act of processing the substrates, the supply of the hydrogen-containing gas from the first nozzle and the supply of the dilution gas from the third nozzle are controlled such that a concentration of the hydrogen-containing gas in the second region is lower than a concentration of the hydrogen-containing gas in the first region,
• wherein an interior of the reaction tube is exhausted,
• wherein the hydrogen-containing gas is supplied from the first nozzle including a plurality of multi-hole nozzles including injection holes corresponding to a divided region obtained by dividing a region including the first region and not including the second region in a substrate arrangement direction,
• wherein the reaction tube includes a ceiling gas supplier installed at a ceiling that is a closed end opposite to the bottom opening, the ceiling gas supplier being configured to supply an inert gas into the reaction tube,
• wherein the second nozzle includes injection holes corresponding to the product substrates arranged in the first region in a one-to-one relationship,
• wherein the injection holes of the second nozzle are not arranged to correspond to a third region in which a plurality of dummy substrates are arranged in the substrate arrangement region to be closest to the ceiling, and
• wherein a part of the injection holes of the first nozzle are arranged to correspond to the third region.