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US 2026/0305198 A1Published application
Semiconductor structure and method for forming the same
AssigneeVisEra Technologies Company Limited
InventorsYi-Hua CHIU, Ming-Yee WONG, Hsin-Yi HSIEH
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Abstract
A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes the following steps. A first deposition process is performed to form a first cladding layer over a substrate. A second deposition process is performed to form a second cladding layer directly on the first cladding layer. The first cladding layer and the second cladding layer are made of the same material, but with different film densities.
Claims20
A method for forming a semiconductor structure, comprising:
- performing a first deposition process to form a first cladding layer over a substrate;
- and
- performing a second deposition process to form a second cladding layer directly on the first cladding layer,
- wherein the first cladding layer and the second cladding layer are made of the same material, but with different film densities.
1 more element
A semiconductor structure, comprising:
- a substrate;
- a first cladding layer disposed over the substrate;
- and
- a second cladding layer disposed on and in direct contact with the first cladding layer, wherein the first cladding layer and the second cladding layer are made of the same material, but with different film densities.
1 more element
Dependencies are inferred from the claim text.