H10P 14/6928
The material containing silicon and at least one metal element
Official title: {the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides}
H10P14/6928 (The material containing silicon and at least one metal element) appears on 625 US grants and 716 published applications in this corpus.
Search patents in H10P- Granted patents
- 625
- Published applications
- 716
- Assignees
- 215
- Inventors
- 1,325
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 4 | 0 |
| 2001 | 12 | 8 |
| 2002 | 6 | 13 |
| 2003 | 19 | 32 |
| 2004 | 24 | 30 |
| 2005 | 22 | 49 |
| 2006 | 25 | 64 |
| 2007 | 34 | 50 |
| 2008 | 21 | 41 |
| 2009 | 44 | 46 |
| 2010 | 40 | 25 |
| 2011 | 33 | 25 |
| 2012 | 28 | 28 |
| 2013 | 22 | 12 |
| 2014 | 13 | 22 |
| 2015 | 32 | 32 |
| 2016 | 42 | 32 |
| 2017 | 20 | 28 |
| 2018 | 27 | 24 |
| 2019 | 16 | 18 |
| 2020 | 20 | 24 |
| 2021 | 15 | 22 |
| 2022 | 19 | 23 |
| 2023 | 14 | 25 |
| 2024 | 25 | 20 |
| 2025 | 16 | 11 |
| 2026 | 7 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10P 14/693The material containing hafnium242
- H10P 14/6929The material containing aluminium176
- H10P 14/6934The material containing zirconium98
- H10P 14/6932The material containing titanium94
- H10P 14/6936The material containing two or more metal elements83
- H10P 14/6933The material containing at least one rare earth element67
- H10P 14/6931The material containing tantalum39
Recent patents
- Semiconductor device and methods of manufacturing the semiconductor device1 Sep 2026US 12,727,231 B2SK hynix Inc.
- Display apparatus2 Jun 2026US 12,648,283 B2LG Display Co., Ltd.
- Epitaxial strontium titanate on silicon2 Jun 2026US 12,648,373 B2Psiquantum, Corp.
- Gate structures for semiconductor devices17 Mar 2026US 12,581,725 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having cut gate dielectric17 Feb 2026US 12,557,372 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- Methods of manufacturing semiconductor devices17 Sep 2026US 2026/0282773 A1APPLIED Materials.Inc.
- Epitaxial strontium titanate on silicon10 Sep 2026US 2026/0271631 A1Psiquantum, Corp.
- Gate structures for semiconductor devices2 Jul 2026US 2026/0190452 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having cut gate dielectric28 May 2026US 2026/0150387 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method for manufacturing thin film using atomic layer deposition885US 6,270,572 B1Samsung Electronics Co., Ltd. · 2001
- System and method for forming a gate dielectric598US 6,858,547 B2APPLIED Materials.Inc. · 2005
- Pretreatment processes within a batch ALD reactor566US 7,402,534 B2APPLIED Materials.Inc. · 2008
- Atomic layer deposition of hafnium-based high-k dielectric560US 7,205,247 B2Aviza Technology, Inc. · 2007
- Method of manufacturing charge storage device553US 7,405,166 B2Industrial Technology Research Institute · 2008