H10P 14/6929
The material containing aluminium
Official title: {the material containing aluminium, e.g. AlSiOx}
H10P14/6929 (The material containing aluminium) appears on 176 US grants and 175 published applications in this corpus.
Search patents in H10P- Granted patents
- 176
- Published applications
- 175
- Assignees
- 79
- Inventors
- 358
- Latest grant
- 3 Feb 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 2 | 2 |
| 2002 | 1 | 4 |
| 2003 | 5 | 5 |
| 2004 | 4 | 7 |
| 2005 | 8 | 14 |
| 2006 | 6 | 21 |
| 2007 | 16 | 8 |
| 2008 | 9 | 4 |
| 2009 | 10 | 11 |
| 2010 | 10 | 3 |
| 2011 | 6 | 8 |
| 2012 | 5 | 8 |
| 2013 | 5 | 0 |
| 2014 | 4 | 1 |
| 2015 | 5 | 15 |
| 2016 | 19 | 11 |
| 2017 | 2 | 3 |
| 2018 | 7 | 10 |
| 2019 | 6 | 6 |
| 2020 | 7 | 6 |
| 2021 | 3 | 8 |
| 2022 | 7 | 4 |
| 2023 | 3 | 5 |
| 2024 | 4 | 6 |
| 2025 | 2 | 1 |
| 2026 | 2 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Simultaneous selective deposition of two different materials on two different surfaces3 Feb 2026US 12,540,387 B2ASM IP Holding B. V.
- Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures13 Jan 2026US 12,525,451 B2ASM IP Holding B. V.
- Semiconductor structure22 Apr 2025US 12,283,611 B2GlobalWafers Co., Ltd.
- Selective removal of an etching stop layer for improving overlay shift tolerance28 Jan 2025US 12,211,700 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures17 Sep 2024US 12,094,936 B2ASM IP Holding B. V.
- Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures23 Apr 2026US 2026/0114192 A1ASM IP Holding B. V.
- Methods for filling recessed features on a substrate with a flowable layer structure26 Feb 2026US 2026/0060013 A1ASM IP Holding B. V.
- Simultaneous selective deposition of two different materials on two different surfaces29 Jan 2026US 2026/0028712 A1ASM IP Holding B. V.
- Alkynes and alkenes for blocking film deposition on silicon22 Jan 2026US 2026/0026270 A1APPLIED Materials.Inc.
- Selective Removal of an Etching Stop Layer for Improving Overlay Shift Tolerance22 May 2025US 2025/0167002 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method for manufacturing thin film using atomic layer deposition885US 6,270,572 B1Samsung Electronics Co., Ltd. · 2001
- Method of growing oxide thin films546US 7,824,492 B2ASM International N.V. · 2010
- Multilayer ceramic coatings from silicate esters and metal oxides485US 4,753,856 ADow Corning Corporation · 1988
- Method and apparatus for filling a gap426US 10,177,025 B2ASM IP Holding B. V. · 2019
- Hydroxyl bond removal and film densification method for oxide films using microwave post treatment413US 7,589,028 B1Novellus Systems, Inc. · 2009