Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
AssigneeASM IP Holding B.V.
InventorsFu Tang, Delphine Longrie, Peng-Fu Hsu
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Abstract
A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.
Claims20
A method for depositing an oxide film on a substrate by a cyclical deposition process comprising a first sub-cycle and a second sub-cycle, the method comprising:
- depositing a metal oxide film on the substrate utilizing at least one deposition cycle of the first sub-cycle of the cyclical deposition process,
- wherein the at least one deposition cycle of the first sub-cycle comprises:
- contacting the substrate with a metal vapor phase precursor comprising at least one of:
- triethylaluminum (TEA), trimethylaluminum (TMA), or dimethylaluminum hydride (DMAH);
- and
- contacting the substrate with an oxygen precursor comprising at least one of water (H2O), hydrogen peroxide (H2O2), nitrogen monoxide (NO), nitrous oxide (N2O), nitrogen dioxide (NO2), and an organic alcohol;
- and
- depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of the second sub-cycle of the cyclical deposition process,
- wherein an oxide film is formed using the step of depositing the metal oxide film and the step of depositing the silicon oxide film directly on the metal oxide film.
A method for depositing an oxide film on a substrate by a cyclical deposition process comprising a first sub-cycle and a second sub-cycle, the method comprising:
- depositing a metal oxide film on the substrate utilizing at least one deposition cycle of the first sub-cycle of the cyclical deposition process, wherein the metal oxide film comprises at least one of:
- an aluminum oxide, a hafnium oxide, a magnesium oxide, a strontium oxide, an yttrium oxide, a lanthanum oxide, an erbium oxide, a zirconium oxide, a cerium oxide, an ytterbium oxide, a scandium oxide, or a tantalum oxide,
- wherein the at least one deposition cycle of the first sub-cycle comprises:
- contacting the substrate with a metal vapor phase precursor;
- and
- contacting the substrate with an oxygen precursor comprising at least one of water (H2O), hydrogen peroxide (H2O2), nitrogen monoxide (NO), nitrous oxide (N2O), nitrogen dioxide (NO2), and an organic alcohol;
- and
- depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of the second sub-cycle of the cyclical deposition process,
- wherein an oxide film is formed using the step of depositing the metal oxide film and the step of depositing the silicon oxide film directly on the metal oxide film.
Dependencies are inferred from the claim text.